JPH039614B2 - - Google Patents

Info

Publication number
JPH039614B2
JPH039614B2 JP60047032A JP4703285A JPH039614B2 JP H039614 B2 JPH039614 B2 JP H039614B2 JP 60047032 A JP60047032 A JP 60047032A JP 4703285 A JP4703285 A JP 4703285A JP H039614 B2 JPH039614 B2 JP H039614B2
Authority
JP
Japan
Prior art keywords
oxide film
arsenic
diffusion layer
silicon oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60047032A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61206231A (ja
Inventor
Kyoteru Kobayashi
Hideaki Arima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60047032A priority Critical patent/JPS61206231A/ja
Priority to US06/823,251 priority patent/US4746377A/en
Publication of JPS61206231A publication Critical patent/JPS61206231A/ja
Publication of JPH039614B2 publication Critical patent/JPH039614B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP60047032A 1985-03-08 1985-03-08 半導体装置およびその製造方法 Granted JPS61206231A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60047032A JPS61206231A (ja) 1985-03-08 1985-03-08 半導体装置およびその製造方法
US06/823,251 US4746377A (en) 1985-03-08 1986-01-28 Semiconductor device with thermally oxidized insulating and arsenic diffusion layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60047032A JPS61206231A (ja) 1985-03-08 1985-03-08 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS61206231A JPS61206231A (ja) 1986-09-12
JPH039614B2 true JPH039614B2 (en]) 1991-02-08

Family

ID=12763833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60047032A Granted JPS61206231A (ja) 1985-03-08 1985-03-08 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US4746377A (en])
JP (1) JPS61206231A (en])

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8713574D0 (en) * 1987-06-10 1987-07-15 Albright & Wilson Liquid detergent compositions
US5006480A (en) * 1988-08-08 1991-04-09 Hughes Aircraft Company Metal gate capacitor fabricated with a silicon gate MOS process
US5464782A (en) * 1994-07-05 1995-11-07 Industrial Technology Research Institute Method to ensure isolation between source-drain and gate electrode using self aligned silicidation
KR0174313B1 (ko) * 1994-07-27 1999-02-01 스기야마 가즈히꼬 Mos 커패시터와 그 제조방법
US5796671A (en) * 1996-03-01 1998-08-18 Wahlstrom; Sven E. Dynamic random access memory
JP3161333B2 (ja) * 1996-07-22 2001-04-25 日本電気株式会社 半導体装置およびその製造方法
US5661051A (en) * 1996-10-09 1997-08-26 National Science Council Method for fabricating a polysilicon transistor having a buried-gate structure
US6057216A (en) * 1997-12-09 2000-05-02 International Business Machines Corporation Low temperature diffusion process for dopant concentration enhancement
US6057203A (en) * 1998-06-19 2000-05-02 Programmable Silicon Solutions Integrated circuit capacitor
US7425736B2 (en) * 2005-06-07 2008-09-16 United Microelectronics Corp. Silicon layer with high resistance and fabricating method thereof
KR101872786B1 (ko) 2012-06-22 2018-06-29 엘지전자 주식회사 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법
TWI571427B (zh) * 2013-03-08 2017-02-21 先技股份有限公司 訊號增強裝置與訊號增強方法
US9506777B2 (en) 2013-03-08 2016-11-29 Sagatek Co., Ltd. Micro-electromechanical apparatus having signal attenuation-proof function, and manufacturing method and signal attenuation-proof method thereof
TWI610879B (zh) * 2015-10-16 2018-01-11 碩英股份有限公司 具有防止訊號衰減功能之微機電裝置及其製造方法與防止訊號衰減的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145951B2 (en]) * 1972-06-07 1976-12-06
US4183134A (en) * 1977-02-15 1980-01-15 Westinghouse Electric Corp. High yield processing for silicon-on-sapphire CMOS integrated circuits
US4210689A (en) * 1977-12-26 1980-07-01 Tokyo Shibaura Denki Kabushiki Kaisha Method of producing semiconductor devices
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
US4329773A (en) * 1980-12-10 1982-05-18 International Business Machines Corp. Method of making low leakage shallow junction IGFET devices
US4676845A (en) * 1986-02-18 1987-06-30 Spire Corporation Passivated deep p/n junction

Also Published As

Publication number Publication date
JPS61206231A (ja) 1986-09-12
US4746377A (en) 1988-05-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term